6 results
Growth and characterization of InAs quantum dots on GaAs (100) emitting at 1.31μm.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 794 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, T7.8/Z7.8
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- 2003
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Growth and characterization of InAs quantum dots on GaAs (100) emitting at 1.31μm.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 799 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Z7.8/T7.8
- Print publication:
- 2003
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Photoluminescence Characteristics of GaN Layers Grown on Soi Substrates and Relation to Material Properties
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 307
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- 1997
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AlInAs Band Gap Modulations Observed by Tem and Optical Measurements
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- Journal:
- MRS Online Proceedings Library Archive / Volume 417 / 1995
- Published online by Cambridge University Press:
- 10 February 2011, 271
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- 1995
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Effect of Heavy Doping on the Photoluminescence and Photoreflectance Spectra of Silicon and SiGe Layers.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 406 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 295
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- 1995
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Steplike Lineshape of Low Temperature Photoreflectance Spectra of InAlAs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 406 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 333
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- 1995
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